Samsung Electronics, Co., Ltd., the world leader in advanced memory technology, said today that it has begun mass producing the industry’s first high-performance, three-bit-NAND-based SSD for servers and data centers. The new SSD will allow data centers to better manage workloads related to social networking, web browsing and email, and enhance operation efficiency. Installations of the 3-bit MLC (multi-level-cell) NAND SSDs, initially in large-scale data centers, are expected to begin later this quarter.
The new PM853T SSD, available in densities of 240GB, 480GB and 960GB, offers high levels of random IOPS (inputs/output per second) performance and quality of service (QoS), both essential for data center and cloud server applications. In light of these benefits, Samsung expects the adoption of 3-bit SSDs in data centers to advance rapidly in replacing the 2-bit SSD market.
In broadening the market base for SSDs, the new PM853T SSD will enable IT managers to optimize their SSD upgrades at investment levels similar to those of consumer SSDs. The PM853T delivers a 30 percent increase in manufacturing efficiency compared to SSDs that use 2-bit NAND flash components.
Utilizing Samsung’s 10 nanometer (nm)-class* 3-bit NAND flash components and advanced controller technology, the new drive features a sequential read speed of 530 megabytes per second (MB/s), while writing sequentially at 420MB/s. It also will read data randomly at 90,000 IOPS and handle sustained random writes at 14,000 IOPS.
Source: Samsung
